型号:

AOWF11S65

RoHS:无铅 / 符合
制造商:Alpha & Omega Semiconductor Inc描述:MOSFET N-CH 650V 11A TO262F
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
AOWF11S65 PDF
标准包装 50
系列 aMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 650V
电流 - 连续漏极(Id) @ 25° C 11A
开态Rds(最大)@ Id, Vgs @ 25° C 399 毫欧 @ 5.5A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 13.2nC @ 10V
输入电容 (Ciss) @ Vds 646pF @ 100V
功率 - 最大 28W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 *
包装 管件
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